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Switch device for high power and radioactive environments

CSIC scientists at the Instituto de Microelectrónica de Barcelona - Centro Nacional de Microelectrónica have developed a novel JFET (Junction Field-Effect Transistor) which is very suitable for high-power devices and radioactive environments, where conventional JFET fail. Due to its particular configuration, the device presents very high radiation hardness.

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Tunable reverse photochromic materials for rewritable devices

Researchers from the CSIC and the UAB university, in the Nanosfun group at the Catalan Institute of Nanoscience and Nanotechnology (ICN2) have developed a straightforward strategy to obtain solid materials which change colour when they are exposed to visible light. These materials might find application in multicolored rewritable devices.

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A reliable, low cost pressure circuit

Researchers from CSIC at the Barcelona Microelectronics Institute (IMB-CNM) have developed a very low cost pressure sensor. Very small, it can be monolithically integrated on a circuit, which reduces drastically the production cost. It can be applied in fields that demand pressure monitoring such as food packaging, aeronautics, automobile, remote sensing, health...

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A photothermoelectric cell converts thermal energy into electricity

Researchers from the Instituto de Ciencias de Materiales de Madrid (ICMM-CSIC) have developed a photo thermo-electric cell which produces electricity when it is exposed to temperature differences. It could be part of a thermo-electric generator.

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The CSIC introduces new nanotechnologies at Imaginenano 2018

The CSIC has been present in Imaginenano 2018, the fourth edition of the biggest European event in nanoscience and nanotechnology, which took place in Bilbao (Spain).

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